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AFC2519W - N & P-Channel Enhancement Mode MOSFET

Download the AFC2519W datasheet PDF. This datasheet also covers the AFC2519W-Alfa variant, as both devices belong to the same n & p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFC2519W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • z N-Channel 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z P-Channel -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=105mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=145mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFC2519W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFC2519W
Manufacturer Alfa-MOS
File Size 796.50 KB
Description N & P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFC2519W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFC2519W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. AFC2519W 20V N & P Pair Enhancement Mode MOSFET Features z N-Channel 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z P-Channel -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=105mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=145mΩ@VGS=-1.