AFC1016E Description
AFC1016E, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-563 ) AFC1016E 20V N & P Pair...
AFC1016E Key Features
- 20V/0.6A,RDS(ON)= 360mΩ@VGS=4.5V
- 20V/0.5A,RDS(ON)= 420mΩ@VGS=2.5V
- 20V/0.4A,RDS(ON)= 560mΩ@VGS=1.8V P-Channel
- 20V/-0.4A, RDS(ON)= 620 mΩ@ VGS =-4.5V
- 20V/-0.3A, RDS(ON)= 860 mΩ@ VGS =-2.5V
- 20V/-0.2A, RDS(ON)= 1450 mΩ@ VGS =-1.8V
- Battery Operated Systems
- Load/Power Switching Smart Phones, Pagers