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AFC1016E - N&P-Channel MOSFET

Download the AFC1016E datasheet PDF. This datasheet also covers the AFC1016E-Alfa variant, as both devices belong to the same n&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFC1016E, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • N-Channel.
  • 20V/0.6A,RDS(ON)= 360mΩ@VGS=4.5V.
  • 20V/0.5A,RDS(ON)= 420mΩ@VGS=2.5V.
  • 20V/0.4A,RDS(ON)= 560mΩ@VGS=1.8V P-Channel.
  • -20V/-0.4A, RDS(ON)= 620 mΩ@ VGS =-4.5V.
  • -20V/-0.3A, RDS(ON)= 860 mΩ@ VGS =-2.5V.
  • -20V/-0.2A, RDS(ON)= 1450 mΩ@ VGS =-1.8V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFC1016E-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFC1016E
Manufacturer Alfa-MOS
File Size 691.74 KB
Description N&P-Channel MOSFET
Datasheet download datasheet AFC1016E Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFC1016 N&P-Channel MOSFET
AFC2517W N & P-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFC1016E, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-563 ) AFC1016E 20V N & P Pair Enhancement Mode MOSFET Features N-Channel  20V/0.6A,RDS(ON)= 360mΩ@VGS=4.5V  20V/0.5A,RDS(ON)= 420mΩ@VGS=2.5V  20V/0.4A,RDS(ON)= 560mΩ@VGS=1.8V P-Channel  -20V/-0.4A, RDS(ON)= 620 mΩ@ VGS =-4.5V  -20V/-0.3A, RDS(ON)= 860 mΩ@ VGS =-2.5V  -20V/-0.2A, RDS(ON)= 1450 mΩ@ VGS =-1.