AFC2517W - N & P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFC2517W, a member of the AFC2517W-Alfa N & P-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFC2517W
Manufacturer	Alfa-MOS
File Size	785.95 KB
Description	N & P-Channel Enhancement Mode MOSFET
Datasheet	AFC2517W Datasheet
Additional preview pages of the AFC2517W datasheet.

AFC2517W Product details

Description

AFC2517W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

z N-Channel 20V/4.6A,RDS(ON)=25mΩ@VGS=4.5V 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=38mΩ@VGS=1.8V z P-Channel -20V/-3.6A,RDS(ON)=52mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=65mΩ@VGS=2.5V -20V/-1.2A,RDS(ON)=82mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Pin.

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Published: Nov 22, 2018 |