Alfa-MOS AFC2517W
N & P-Channel Enhancement Mode MOSFET
| Part No. | AFC2517W |
|---|---|
| Datasheet | AFC2517W Download |
| Manufacturer |  Alfa-MOS |
| Description | N & P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFC2517W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. AFC2517W 20V N & P Pair Enhancement Mode MOSFETFEATURES
z N-Channel 20V/4.6A,RDS(ON)=25mΩ@VGS=4.5V 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=38mΩ@VGS=1.8V z P-Channel -20V/-3.6A,RDS(ON)=52mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=65mΩ@VGS=2.5V -20V/-1.2A,RDS(ON)=82mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design PinDESCRIPTION
( DFN2X2-6L ) Application z Portable Devices Such as Smart Phones, Tablet PCs and Mobile Computing - Load Switches - Power Management - DC/DC Converters ©Alfa-MOS Technology Corp. Rev.B Jan. 2018 Pag
