AFC1016 Datasheet | Alfa-MOS

Description AFC1016, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-563 ) 20V N & P Pair Enhancement Mode MOSFET Features N-Channel 20V/0.6A,RDS(ON)= 360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)= 420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)= 560mΩ@VGS=1.8V P-Channel -20V/-0.4A, RDS(ON)= 620 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 860 mΩ@ VGS =-2.5V -20V/-0.2A, RDS(ON)= 1450 mΩ@ VGS =-1.8V Application Battery Operated Systems Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 Ordering Information Part Ordering No. Part Marking Package...