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AFC1016 - N&P-Channel MOSFET

Download the AFC1016 datasheet PDF. This datasheet also covers the AFC1016-Alfa variant, as both devices belong to the same n&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFC1016, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • N-Channel 20V/0.6A,RDS(ON)= 360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)= 420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)= 560mΩ@VGS=1.8V P-Channel -20V/-0.4A, RDS(ON)= 620 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 860 mΩ@ VGS =-2.5V -20V/-0.2A, RDS(ON)= 1450 mΩ@ VGS =-1.8V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFC1016-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFC1016
Manufacturer Alfa-MOS
File Size 1.09 MB
Description N&P-Channel MOSFET
Datasheet download datasheet AFC1016 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFC1016E N&P-Channel MOSFET
AFC2517W N & P-Channel Enhancement Mode MOSFET
AFC2519W N & P-Channel Enhancement Mode MOSFET
AFC2527W N & P-Channel Enhancement Mode MOSFET
AFC3326WS N&P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFC1016, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-563 ) AFC1016 20V N & P Pair Enhancement Mode MOSFET Features N-Channel 20V/0.6A,RDS(ON)= 360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)= 420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)= 560mΩ@VGS=1.8V P-Channel -20V/-0.4A, RDS(ON)= 620 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 860 mΩ@ VGS =-2.5V -20V/-0.2A, RDS(ON)= 1450 mΩ@ VGS =-1.