AFC2519W - N & P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFC2519W, a member of the AFC2519W-Alfa N & P-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFC2519W
Manufacturer	Alfa-MOS
File Size	796.50 KB
Description	N & P-Channel Enhancement Mode MOSFET
Datasheet	AFC2519W Datasheet
Additional preview pages of the AFC2519W datasheet.

AFC2519W Product details

Description

AFC2519W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

z N-Channel 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z P-Channel -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=105mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=145mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Pin.

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Published: Nov 22, 2018 |