AFC2519W Datasheet | Alfa-MOS

Description AFC2519W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. 20V N & P Pair Enhancement Mode MOSFET Features z N-Channel 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z P-Channel -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=105mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=145mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Pin Description ( DFN2X2-6L ) Application z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter ©Alfa-MOS Technology Corp. Rev.E Jan....