z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design Application z Power Supply .

Pin Description ( TO-220-3L ) Features z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high d.

AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN1012

AFN1012E

AFN1024

AFN1024E

AFN1026S

AFN1032

AFN1032E

AFN1034

AFN1034E

AFN1055S

AFN1062KS

AFN1072

AFN1072E