AFN1010S Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN1010S Features

* z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design Application z Power Supply - Secondary Synchronous Rectification z DC/DC converter z DC/AV inverter z Power tools z Motor drive switch Pin Define Pin 1 2 3

AFN1010S General Description

AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial applications. Pin Description ( TO-220-3L.

AFN1010S Datasheet (387.57 KB)

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AFN1010S

Manufacturer:

Alfa-MOS

File Size:

387.57 KB

Description:

N-channel enhancement mode mosfet.

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AFN1010S N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN1010S Features

AFN1010S General Description

Datasheet Details

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