AFN1012 datasheet, mosfet equivalent, Alfa-MOS

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AFN1012 Features and benefits

20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low B.

AFN1012 Application

Pin Description ( SOT-523 ) AFN1012 20V N-Channel Enhancement Mode MOSFET Features 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V.

AFN1012 Description

AFN1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-l.

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