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AFN1032E Datasheet - Alfa-MOS

N-Channel MOSFET

AFN1032E Features

* 30V/0.6A,RDS(ON)=500mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=600mΩ@VGS=2.5V 30V/0.4A,RDS(ON)=880mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-523 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, M

AFN1032E General Description

AFN1032E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFN1032E Datasheet (564.44 KB)

Preview of AFN1032E PDF

Datasheet Details

Part number:

AFN1032E

Manufacturer:

Alfa-MOS

File Size:

564.44 KB

Description:

N-channel mosfet.

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AFN1032E N-Channel MOSFET Alfa-MOS

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