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AFN1032E - N-Channel MOSFET

Download the AFN1032E datasheet PDF. This datasheet also covers the AFN1032E-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN1032E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 30V/0.6A,RDS(ON)=500mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=600mΩ@VGS=2.5V 30V/0.4A,RDS(ON)=880mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-523 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1032E-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1032E
Manufacturer Alfa-MOS
File Size 564.44 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN1032E Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN1032 N-Channel MOSFET
AFN1034 N-Channel MOSFET
AFN1034E N-Channel MOSFET
AFN1010S N-Channel Enhancement Mode MOSFET
AFN1012 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN1032E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-523 ) AFN1032E 30V N-Channel Enhancement Mode MOSFET Features 30V/0.6A,RDS(ON)=500mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=600mΩ@VGS=2.5V 30V/0.4A,RDS(ON)=880mΩ@VGS=1.