• Part: AFN1055S
  • Description: N-Channel Enhancement Mode MOSFET
  • Manufacturer: Alfa-MOS
  • Size: 363.90 KB
Download AFN1055S Datasheet PDF
Alfa-MOS
AFN1055S
AFN1055S is N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN1055S-Alfa comparator family.
Alfa-MOS Technology 100V N-Channel Enhancement Mode MOSFET General Description AFN1055S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-220-3L ) Features - 100V/40A,RDS(ON)=6.0mΩ@VGS=10V - 100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - TO-220-3L package design Application - Power Supply - Secondary Synchronous Rectification - Industrial - Primary Switch Pin Define Pin 1 2 3 Symbol...