AFN1055S Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN1055S Features

* 100V/40A,RDS(ON)=6.0mΩ@VGS=10V

* 100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* TO-220-3L package design Application

* Power Supply - Secondary Synchronous Rectification

* Industrial

* Primary Switch Pin Define Pin 1 2 3

AFN1055S General Description

AFN1055S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN1055S Datasheet (363.90 KB)

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Datasheet Details

Part number:

AFN1055S

Manufacturer:

Alfa-MOS

File Size:

363.90 KB

Description:

N-channel enhancement mode mosfet.

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AFN1055S N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN1055S Features

AFN1055S General Description

Datasheet Details

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