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AFN1072E - N-Channel MOSFET

Download the AFN1072E datasheet PDF. This datasheet also covers the AFN1072E-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN1072E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/0.8A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.7A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.6A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-723 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1072E-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1072E
Manufacturer Alfa-MOS
File Size 673.48 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN1072E Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN1072 N-Channel MOSFET
AFN1010S N-Channel Enhancement Mode MOSFET
AFN1012 N-Channel MOSFET
AFN1012E N-Channel MOSFET
AFN1024 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN1072E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-723 ) AFN1072E 20V N-Channel Enhancement Mode MOSFET Features 20V/0.8A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.7A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.6A,RDS(ON)=560mΩ@VGS=1.