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AFN10A60D Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology AFN10A60D 600V / 10A N-Channel Enhancement Mode MOSFET.

Download the AFN10A60D datasheet PDF. This datasheet also includes the AFN10A60D-Alfa variant, as both parts are published together in a single manufacturer document.

Datasheet Details

Part number AFN10A60D
Manufacturer Alfa-MOS
File Size 498.43 KB
Description N-Channel Enhancement Mode MOSFET
Download AFN10A60D Download (PDF)

General Description

AFN10A60D is an N-channel enhancement mode Power MOSFET which is produced using VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Key Features

  • 600V/5A,RDS(ON)=0.58Ω(typ. )@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.