AFN2014
AFN2014 is N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN2014-Alfa comparator family.
- Part of the AFN2014-Alfa comparator family.
Alfa-MOS
Technology
General Description
AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Pin Description ( TO-252-2L )
20V N-Channel Enhancement Mode MOSFET
Features
20V/ 10A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 8A,RDS(ON)=17mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=21mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power Management in Desktop puter DC/DC Converter LCD Display inverter
Pin Define
Pin 1 2...
