AFN2306AE Datasheet - Alfa-MOS

N-Channel MOSFET

AFN2306AE Features

* 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design Application Direct Logic-Level Interface: TTL/CMO

AFN2306AE General Description

AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN2306AE Datasheet (721.20 KB)

AFN2306AE Datasheet Preview — Preview of AFN2306AE PDF

Datasheet Details

Part number:

AFN2306AE

Manufacturer:

Alfa-MOS

File Size:

721.20 KB

Description:

N-channel mosfet.

📁 Related Datasheet

AFN2306A N-Channel MOSFET (Alfa-MOS)

AFN2302AS N-Channel MOSFET (Alfa-MOS)

AFN2304AS N-Channel MOSFET (Alfa-MOS)

AFN2308A 60V N-Channel MOSFET (Alfa-MOS)

AFN2308AS23RG N-Channel 60V MOSFET (VBsemi)

AFN2312A 20V N-Channel Enhancement Mode MOSFET (Alfa-MOS)

AFN2316A N-Channel MOSFET (Alfa-MOS)

AFN2318A N-Channel MOSFET (Alfa-MOS)

AFN2324A 100V N-Channel Enhancement Mode MOSFET (Alfa-MOS)

AFN2324BA 110V N-Channel Enhancement Mode MOSFET (Alfa-MOS)

TAGS

AFN2306AE N-Channel MOSFET Alfa-MOS

Image Gallery

AFN2306AE Features

AFN2306AE General Description

Datasheet Details

File Size:

Description:

AFN2306AE Distributor