AFN2306AE, AFN2306AE-Alfa - N-Channel MOSFET

Alfa-MOS

Datasheet Details

Part number	AFN2306AE, AFN2306AE-Alfa
Manufacturer	Alfa-MOS
File Size	721.20 KB
Description	N-Channel MOSFET
Datasheet	AFN2306AE-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFN2306AE, AFN2306AE-Alfa. Please refer to the document for exact specifications by model.

AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design.

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Published: Nov 29, 2018 |