40V/2.6A,RDS(ON)= 68mΩ@VGS=10V 40V/2.2A,RDS(ON)= 88mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current .

Pin Description ( SOT-23 ) AFN2318A 40V N-Channel Enhancement Mode MOSFET Features 40V/2.6A,RDS(ON)= 68mΩ@VGS=10V 40V/.

AFN2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

AFN2312A

AFN2316A

AFN2302AS

AFN2304AS

AFN2306A

AFN2306AE

AFN2308A

AFN2324A

AFN2324BA

AFN2326BS

AFN2326S

AFN2330

AFN2330A