AFN2408WS mosfet equivalent, n-channel enhancement mode mosfet.
z 30V/5.6A,RDS(ON)=25mΩ@VGS=10V z 30V/5.2A,RDS(ON)=28mΩ@VGS=4.5V z 30V/4.2A,RDS(ON)=34mΩ@VGS=2.5V z Super high density cell design for extremely
low RDS (ON) z DFN2X2-6L .
Pin Description ( DFN2X2-6L )
AFN2408WS
30V N-Channel Enhancement Mode MOSFET
Features
z 30V/5.6A,RDS(ON)=25mΩ@VGS=10V.
AFN2408WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
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