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AFN2444WS - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2444WS, a member of the AFN2444WS-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2444WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 30V/3.0A,RDS(ON)=15mΩ@VGS=10V z 30V/3.0A,RDS(ON)=20mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design.

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Datasheet preview – AFN2444WS

Datasheet Details

Part number AFN2444WS
Manufacturer Alfa-MOS
File Size 407.32 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2444WS Datasheet
Additional preview pages of the AFN2444WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2444WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) AFN2444WS 30V N-Channel Enhancement Mode MOSFET Features z 30V/3.0A,RDS(ON)=15mΩ@VGS=10V z 30V/3.0A,RDS(ON)=20mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z DC/DC Converter z High Frequency Switching Pin Define Pin 1,2,5,6 4 3 Symbol D S G Description Drain Source Gate Ordering Information Part Ordering No.
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