AFN2408WS Datasheet | Alfa-MOS

Description AFN2408WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) 30V N-Channel Enhancement Mode MOSFET Features z 30V/5.6A,RDS(ON)=25mΩ@VGS=10V z 30V/5.2A,RDS(ON)=28mΩ@VGS=4.5V z 30V/4.2A,RDS(ON)=34mΩ@VGS=2.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z DC/DC Converter z High Frequency Switching Pin Define Pin 1,2,5,6 4 3 Symbol D S G Description Drain Source Gate Ordering Information Part Ordering No. Part Marking Package AFN2408WSFN226RG W08YW DFN2X2-6L ※ W08 part code ※ Y year code ※ W week code ※ AFN2408WSFN226RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free Unit Tape & Reel Quantity 4000...