AFN2416W Datasheet | Alfa-MOS

Description AFN2416W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) 100V N-Channel Enhancement Mode MOSFET Features z 100V/3.2A,RDS(ON)=120mΩ@VGS=10V z 100V/2.6A,RDS(ON)=130mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z DC/DC Converter z Full-Bridge Converters z For Power Bricks and POL Power Pin Define Pin 1,2,5,6 4 3 Symbol D S G Description Drain Source Gate Ordering Information Part Ordering No. Part Marking Package AFN2416WFN226RG 416YW DFN2X2-6L ※ 416 part code ※ Y year code ※ W week code ※ AFN2416WFN226RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.B Jan....