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AFN2416W - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2416W, a member of the AFN2416W-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2416W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 100V/3.2A,RDS(ON)=120mΩ@VGS=10V z 100V/2.6A,RDS(ON)=130mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design.

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Datasheet preview – AFN2416W

Datasheet Details

Part number AFN2416W
Manufacturer Alfa-MOS
File Size 428.15 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2416W Datasheet
Additional preview pages of the AFN2416W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2416W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) AFN2416W 100V N-Channel Enhancement Mode MOSFET Features z 100V/3.2A,RDS(ON)=120mΩ@VGS=10V z 100V/2.6A,RDS(ON)=130mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z DC/DC Converter z Full-Bridge Converters z For Power Bricks and POL Power Pin Define Pin 1,2,5,6 4 3 Symbol D S G Description Drain Source Gate Ordering Information Part Ordering No.
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