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AFN2448WS - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2448WS, a member of the AFN2448WS-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2448WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V z 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V z 20V/3.0A,RDS(ON)=20mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z ESD Protection ( >2KV ) Diode design.
  • in z DFN2X2-6L package design.

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Datasheet preview – AFN2448WS

Datasheet Details

Part number AFN2448WS
Manufacturer Alfa-MOS
File Size 418.74 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2448WS Datasheet
Additional preview pages of the AFN2448WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2448WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) AFN2448WS 20V N-Channel Enhancement Mode MOSFET Features z 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V z 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V z 20V/3.0A,RDS(ON)=20mΩ@VGS=1.
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