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AFN2448WS Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN2448WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( DFN2X2-6L ) AFN2448WS 20V N-Channel Enhancement Mode MOSFET

Key Features

  • z 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V z 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V z 20V/3.0A,RDS(ON)=20mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z ESD Protection ( >2KV ) Diode design.
  • in z DFN2X2-6L package design.

AFN2448WS Distributor