AFN2448WS Datasheet | Alfa-MOS

Description AFN2448WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) 20V N-Channel Enhancement Mode MOSFET Features z 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V z 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V z 20V/3.0A,RDS(ON)=20mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z ESD Protection ( >2KV ) Diode design- in z DFN2X2-6L package design Application z For Smart Phones and Mobile puting - Load Switches - DC/DC Converters Pin Define Pin 1,2,5,6 4 3 Symbol D S G Description Drain Source Gate Ordering Information Part Ordering No. Part Marking Package AFN2448WSFN226RG W48YW DFN2X2-6L ※ W48 part code ※ Y year code ※ W week code ※ AFN2448WSFN226RG : 7” Tape...