AFN2416W mosfet equivalent, n-channel enhancement mode mosfet.
z 100V/3.2A,RDS(ON)=120mΩ@VGS=10V z 100V/2.6A,RDS(ON)=130mΩ@VGS=4.5V z Super high density cell design for extremely
low RDS (ON) z DFN2X2-6L package design
Application
z.
Pin Description ( DFN2X2-6L )
AFN2416W
100V N-Channel Enhancement Mode MOSFET
Features
z 100V/3.2A,RDS(ON)=120mΩ@VGS=1.
AFN2416W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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