AFN2444WS mosfet equivalent, n-channel enhancement mode mosfet.
z 30V/3.0A,RDS(ON)=15mΩ@VGS=10V z 30V/3.0A,RDS(ON)=20mΩ@VGS=4.5V z Super high density cell design for extremely
low RDS (ON) z DFN2X2-6L package design
Application
z DC/.
Pin Description ( DFN2X2-6L )
AFN2444WS
30V N-Channel Enhancement Mode MOSFET
Features
z 30V/3.0A,RDS(ON)=15mΩ@VGS=10V.
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