• Part: AFN2444WS
  • Description: N-Channel Enhancement Mode MOSFET
  • Manufacturer: Alfa-MOS
  • Size: 407.32 KB
Download AFN2444WS Datasheet PDF
Alfa-MOS
AFN2444WS
AFN2444WS is N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN2444WS-Alfa comparator family.
Alfa-MOS Technology General Description AFN2444WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) 30V N-Channel Enhancement Mode MOSFET Features z 30V/3.0A,RDS(ON)=15mΩ@VGS=10V z 30V/3.0A,RDS(ON)=20mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z DC/DC Converter z High Frequency Switching Pin Define Pin 1,2,5,6 4 3 Symbol D S G Description Drain Source...