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Alfa-MOS

AFN2444WS Datasheet Preview

AFN2444WS Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
General Description
AFN2444WS, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( DFN2X2-6L )
AFN2444WS
30V N-Channel
Enhancement Mode MOSFET
Features
z 30V/3.0A,RDS(ON)=15m@VGS=10V
z 30V/3.0A,RDS(ON)=20m@VGS=4.5V
z Super high density cell design for extremely
low RDS (ON)
z DFN2X2-6L package design
Application
z DC/DC Converter
z High Frequency Switching
Pin Define
Pin
1,2,5,6
4
3
Symbol
D
S
G
Description
Drain
Source
Gate
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2444WSFN226RG
W44YW
DFN2X2-6L
W44 part code
Y year code
W week code
AFN2444WSFN226RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
Unit
Tape & Reel
Quantity
4000 EA
©Alfa-MOS Technology Corp.
Rev.B Jan. 2018
www.alfa-mos.com
Page 1




Alfa-MOS

AFN2444WS Datasheet Preview

AFN2444WS Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN2444WS
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25
TA=70
TA=25
TA=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±20
11
8.8
40
2.9
3.5
2.2
150
-55/150
36
Unit
V
V
A
A
A
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.B Jan. 2018
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85
VDS5V,VGS=10V
VGS=10V,ID=3.0A
VGS=4.5V,ID=3.0A
VDS=10V,ID=7.4A
IS=3.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=4.5V
ID11A
VDS=15V,VGS=0V
f=1MHz
VDD=15V,RL=1.7
ID8.8A,VGEN=4.5V
RG=1
Min. Typ Max. Unit
30 V
1.0 2.5
±100
1
10
nA
uA
20 A
11
14
15
20
m
24 S
0.85 1.3 V
5 10
1.5 nC
1.7
560
125 pF
55
12 25
12
15
25
30
ns
10 20
www.alfa-mos.com
Page 2



Part Number AFN2444WS
Description N-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
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