AFN2448WS mosfet equivalent, n-channel enhancement mode mosfet.
z 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V z 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V z 20V/3.0A,RDS(ON)=20mΩ@VGS=1.8V z Super high density cell design for extremely
low RDS (ON) z ESD Prote.
Pin Description ( DFN2X2-6L )
AFN2448WS
20V N-Channel Enhancement Mode MOSFET
Features
z 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5.
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