AFN2515S mosfet equivalent, n-channel enhancement mode mosfet.
150V/15A,RDS(ON)= 64mΩ@VGS=10V 150V/10A,RDS(ON)= 70mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-252-.
Features
150V/15A,RDS(ON)= 64mΩ@VGS=10V 150V/10A,RDS(ON)= 70mΩ@VGS=6V Super high density cell design for extremely low.
AFN2515S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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