AFN3009S Datasheet, Alfa-MOS

* 30V/35A,RDS(ON)=8.5mΩ@VGS=10V
* 30V/20A,RDS(ON)=11.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-252-2L package design .

Pin Description ( TO-252-2L ) AFN3009S 30V N-Channel Enhancement Mode MOSFET Features
* 30V/35A,RDS(ON)=8.5mΩ@VGS=.

AFN3009S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.