AFN3015S Datasheet | Alfa-MOS

Description AFN3015S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-252-2L ) 30V N-Channel Enhancement Mode MOSFET Features 30V/45A,RDS(ON)=5.1mΩ@VGS=10V 30V/30A,RDS(ON)=6.8mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Buck Converter - High Side - Low Side Synchronous Rectifier - Secondary Rectifier Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN3015ST252RG 3015S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN3015ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2012 Description Gate Source Drain Unit Tape &...