AFN3025S Datasheet | Alfa-MOS

Description AFN3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-252-2L ) 30V N-Channel Enhancement Mode MOSFET Features 30V/9.0A,RDS(ON)=32mΩ@VGS=10V 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook puter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN3025ST252RG 3025S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN3025ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.B Sep. 2010 Description Gate Source...