AFN3019S Description
AFN3019S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN3019S 30V N-Channel Enhancement Mode MOSFET.
AFN3019S Key Features
- 30V/35A,RDS(ON)=9mΩ@VGS=10V
- 30V/20A,RDS(ON)=13mΩ@VGS=4.5V
- Super high density cell design for extremely
- TO-252-2L package design
- Buck Converter
- Low Side
- Synchronous Rectifier
- Secondary Rectifier