AFN3019S Datasheet | Alfa-MOS

Description AFN3019S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-252-2L ) 30V N-Channel Enhancement Mode MOSFET Features - 30V/35A,RDS(ON)=9mΩ@VGS=10V - 30V/20A,RDS(ON)=13mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - TO-252-2L package design Application - Buck Converter - Low Side - Synchronous Rectifier - Secondary Rectifier Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN3019ST252RG 3019S TO-252-2L ※ A Lot code ※ B Date code ※ AFN3019ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.B June 2018 Description Gate Source Drain Unit Tape &...