Alfa-MOS AFN3009S
N-Channel Enhancement Mode MOSFET
| Part No. | AFN3009S |
|---|---|
| Datasheet | AFN3009S Download |
| Manufacturer |  Alfa-MOS |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN3009S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( TO-252-2L ) AFN3009S 30V N-Channel Enhancement Mode MOSFETFEATURES
● 30V/35A,RDS(ON)=8.5mΩ@VGS=10V● 30V/20A,RDS(ON)=11.5mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS (ON)
● TO-252-2L package design Application
● Buck Converter − High Side − Low Side
● Synchronous Rectifier − Secondary Rectifier Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN3009ST252RG 3009S TO-252-2L ※ A Lot code ※ B Date code ※ AFN3009ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.B June 2018
DESCRIPTION
Gate Source Drain
