AFN3019S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN3019S, a member of the AFN3019S-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

📥 Download Datasheet

Datasheet Details

Part number	AFN3019S
Manufacturer	Alfa-MOS
File Size	495.48 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN3019S Datasheet
Additional preview pages of the AFN3019S datasheet.

AFN3019S Product details

Description

AFN3019S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

30V/35A,RDS(ON)=9mΩ@VGS=10V.
30V/20A,RDS(ON)=13mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
TO-252-2L package design.

📁 Similar Datasheet

AFN2308AS23RG - N-Channel 60V MOSFET (VBsemi)
AFND1208U1 - 512Mbit (64M x 8-Bit)NAND FLASH (ATO)
AFND1G08U3 - 1G-bit NAND FLASH (ATO)

Other Datasheets by Alfa-MOS

AFN3015S - N-Channel Enhancement Mode MOSFET
AFN3016S - N-Channel Enhancement Mode MOSFET
AFN3006S - N-Channel Enhancement Mode MOSFET
AFN3009S - N-Channel Enhancement Mode MOSFET
AFN3025S - N-Channel Enhancement Mode MOSFET
AFN3030 - N-Channel Enhancement Mode MOSFET
AFN3112W - 100V N-Channel Enhancement Mode MOSFET
AFN3302W - N-Channel MOSFET

Published: Dec 6, 2018 |