AFN3019S
AFN3019S is N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN3019S-Alfa comparator family.
- Part of the AFN3019S-Alfa comparator family.
Alfa-MOS
Technology
General Description
AFN3019S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Pin Description ( TO-252-2L )
30V N-Channel Enhancement Mode MOSFET
Features
- 30V/35A,RDS(ON)=9mΩ@VGS=10V
- 30V/20A,RDS(ON)=13mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- TO-252-2L package design
Application
- Buck Converter
- Low Side
- Synchronous Rectifier
- Secondary Rectifier
Pin Define
Pin 1 2 3
Symbol G S D
Ordering...
