AFN3025S mosfet equivalent, n-channel enhancement mode mosfet.
30V/9.0A,RDS(ON)=32mΩ@VGS=10V 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package de.
Pin Description ( TO-252-2L )
AFN3025S
30V N-Channel Enhancement Mode MOSFET
Features
30V/9.0A,RDS(ON)=32mΩ@VGS=10V 30.
AFN3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
Download