AFN3025S Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFN3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-252-2L ) 30V N-Channel Enhancement Mode MOSFET Features 30V/9.0A,RDS(ON)=32mΩ@VGS=10V 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook puter Pin Define Pin...