AFN3030
AFN3030 is N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN3030-Alfa comparator family.
- Part of the AFN3030-Alfa comparator family.
Alfa-MOS
Technology
General Description
AFN3030, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Pin Description ( TO-252-2L )
30V N-Channel Enhancement Mode MOSFET
Features
30V/12A,RDS(ON)= 30mΩ@VGS=10V 30V/10A,RDS(ON)= 40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power Management in Desktop puter DC/DC Converter LCD Display inverter
Pin Define
Pin 1 2 3
Symbol G S D
Ordering...
