AFN3030 mosfet equivalent, n-channel enhancement mode mosfet.
30V/12A,RDS(ON)= 30mΩ@VGS=10V 30V/10A,RDS(ON)= 40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power Managem.
Pin Description ( TO-252-2L )
AFN3030
30V N-Channel Enhancement Mode MOSFET
Features
30V/12A,RDS(ON)= 30mΩ@VGS=10V 30V.
AFN3030, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
Image gallery
Download