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AFN3400A - N-Channel MOSFET

Download the AFN3400A datasheet PDF. This datasheet also covers the AFN3400A-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN3400A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 30V/2.4A,RDS(ON)=54mΩ@VGS=10V 30V/1.8A,RDS(ON)=58mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=65mΩ@VGS=2.5V 30V/1.0A,RDS(ON)=180mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) SOT-23 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN3400A-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN3400A
Manufacturer Alfa-MOS
File Size 709.73 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN3400A Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN3400AS 30V N-Channel MOSFET
AFN3400S N-Channel Enhancement Mode MOSFET
AFN3402A N-Channel MOSFET
AFN3402AS N-Channel MOSFET
AFN3404AS N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN3400A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN3400A 30V N-Channel Enhancement Mode MOSFET Features 30V/2.4A,RDS(ON)=54mΩ@VGS=10V 30V/1.8A,RDS(ON)=58mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=65mΩ@VGS=2.5V 30V/1.0A,RDS(ON)=180mΩ@VGS=1.