AFN3406AS mosfet equivalent, n-channel mosfet.
* ID=2.8A,RDS(ON)=40mΩ@VGS=10V
* ID=2.4A,RDS(ON)=48mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* SOT-23 package design
Applic.
Pin Description ( SOT-23 )
AFN3406AS
30V N-Channel Enhancement Mode MOSFET
Features
* ID=2.8A,RDS(ON)=40mΩ@VGS=10V.
AFN3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
Image gallery
Download