AFN3484S Datasheet, Alfa-MOS

* 30V/30A,RDS(ON)=13mΩ@VGS=10V
* 30V/18A,RDS(ON)=18mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-252-2L package design App.

Pin Description ( TO-252-2L ) AFN3484S 30V N-Channel Enhancement Mode MOSFET Features
* 30V/30A,RDS(ON)=13mΩ@VGS=1.