AFN4546W Datasheet, Alfa-MOS

40V/6.8A,RDS(ON)=48mΩ@VGS=10V 40V/5.6A,RDS(ON)=60mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Low Current DC/D.

Pin Description ( SOP-8P ) AFN4546W 40V N-Channel Enhancement Mode MOSFET Features 40V/6.8A,RDS(ON)=48mΩ@VGS=10V 40V/5.

AFN4546W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.