AFN4808W Datasheet, Alfa-MOS

20V/6.2A,RDS(ON)=30mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=35mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=42mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resi.

Pin Description ( DFN2X3-8L ) AFN4808W 20V N-Channel Enhancement Mode MOSFET Features 20V/6.2A,RDS(ON)=30mΩ@VGS=4.5V 2.