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AFN4840WS - N-Channel MOSFET

Download the AFN4840WS datasheet PDF (AFN4840WS-Alfa included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

AFN4840WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 40V/12.4A,RDS(ON)= 11mΩ@VGS=10V 40V/10.8A,RDS(ON)= 13mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Note: The manufacturer provides a single datasheet file (AFN4840WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN4840WS
Manufacturer Alfa-MOS
File Size 575.25 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4840WS Datasheet

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN4840WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4840WS 40V N-Channel Enhancement Mode MOSFET Features 40V/12.4A,RDS(ON)= 11mΩ@VGS=10V 40V/10.8A,RDS(ON)= 13mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Rectification Car Charger POL, IBC - Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.
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