900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Alfa-MOS

AFN4840WS Datasheet Preview

AFN4840WS Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
General Description
AFN4840WS, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOP-8P )
AFN4840WS
40V N-Channel
Enhancement Mode MOSFET
Features
40V/12.4A,RDS(ON)= 11m@VGS=10V
40V/10.8A,RDS(ON)= 13m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
SOP-8P package design
Application
Synchronous Rectification
Car Charger
POL, IBC
- Secondary Side
Pin Define
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4840WSS8RG
4840WS
SOP-8P
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN4840WSS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Apr. 2015
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1




Alfa-MOS

AFN4840WS Datasheet Preview

AFN4840WS Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN4840WS
40V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
L = 0.1 mH
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
IS
PD
TJ
TSTG
RθJA
Typical
40
±20
12.4
10.0
50
15
11
2.1
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
mJ
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Apr. 2015
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=32V,VGS=0V
VDS=32V,VGS=0V
TJ=85к
VDSЊ5V,VGS=10V
VGS=10V,ID=12.4A
VGS=4.5V,ID=10.8A
VDS=15V,ID=12.4A
IS=10A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V
ID= 12.4A
VDS=20V,VGS=0V
f=1MHz
VDD=20V,RL=2
ID12.4A,VGEN=10V
RG=1
Min. Typ Max. Unit
40 V
1.0 2.5
±100 nA
1
10 uA
50 A
7.4
8.7
11
13
m
56 S
0.85 1.2 V
15 30
6.8 nC
5.2
2000
260 pF
150
10 20
15
30
30
60
ns
10 20
www.alfa-mos.com
Page 2



Part Number AFN4840WS
Description N-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
PDF Download

AFN4840WS Datasheet PDF





Similar Datasheet

1 AFN4840WS N-Channel Enhancement Mode MOSFET
Alfa-MOS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy