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AFN4848WS - N-Channel MOSFET

This page provides the datasheet information for the AFN4848WS, a member of the AFN4848WS-Alfa N-Channel MOSFET family.

Description

AFN4848WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 150V/5.0A,RDS(ON)=64mΩ@VGS=10V.
  • 150V/3.0A,RDS(ON)=70mΩ@VGS=6V.
  • Super high density cell design for extremely low RDS (ON).
  • SOP-8P package design.

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Datasheet Details

Part number AFN4848WS
Manufacturer Alfa-MOS
File Size 336.85 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4848WS Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN4848WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4848WS 150V N-Channel Enhancement Mode MOSFET Features  150V/5.0A,RDS(ON)=64mΩ@VGS=10V  150V/3.0A,RDS(ON)=70mΩ@VGS=6V  Super high density cell design for extremely low RDS (ON)  SOP-8P package design Application  Motor and Load Control  AD/DC Inverter Systems.  Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.
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