AFN4850WS mosfet equivalent, n-channel mosfet.
60V/8.5A,RDS(ON)=15mΩ@VGS=10V 60V/7.2A,RDS(ON)=17mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Motor and Load C.
Pin Description ( SOP-8P )
AFN4850WS
60V N-Channel Enhancement Mode MOSFET
Features
60V/8.5A,RDS(ON)=15mΩ@VGS=10V 60V/.
AFN4850WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
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