AFN4900W mosfet equivalent, 60v n-channel mosfet.
* ID=6.8A,RDS(ON)=100mΩ@VGS=10V
* ID=5.6A,RDS(ON)=130mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* SOP-8P package design
Appl.
Pin Description ( SOP-8P )
AFN4900W
60V N-Channel Enhancement Mode MOSFET
Features
* ID=6.8A,RDS(ON)=100mΩ@VGS=10V.
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