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Alfa-MOS

AFN4936WS Datasheet Preview

AFN4936WS Datasheet

N-Channel Enhancement Mode MOSFET

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Alfa-MOS
Technology
General Description
AFN4936WS, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOP-8P )
AFN4936WS
30V N-Channel
Enhancement Mode MOSFET
Features
30V/5.0A,RDS(ON)=24m@VGS=10V
30V/4.7A,RDS(ON)=38m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
SOP-8P package design
Application
Low Current DC/DC Conversion
Load Switch
CCFL Inverter
Power Management in Notebook Computer
Pin Define
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4936WSS8RG
4936WS
SOP-8P
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN4936WSS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.B July 2010
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1




Alfa-MOS

AFN4936WS Datasheet Preview

AFN4936WS Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN4936WS
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±20
5.4
4.0
20
1.5
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.B July 2010
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=10V,ID=5.0A
VGS=4.5V,ID=4.7A
VDS=15V,ID=5.2A
IS=1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=20V,VGS=4.5V
ID5.2A
VDS=20V,VGS=0V
f=1MHz
VDD=15V,RL=15
ID1.0A,VGEN=10V
RG=6
Min. Typ Max. Unit
30 V
1.3 2.1
±100 nA
1
30 uA
10 A
16
23
24
38
m
13 S
0.8 1.3 V
8 12
1.6 nC
2.4
700
75 pF
45
8 12
12
28
18
40
ns
10 18
www.alfa-mos.com
Page 2



Part Number AFN4936WS
Description N-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
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