AFN5008S Datasheet, Alfa-MOS

z 40V/20A,RDS(ON)= 8.5mΩ@VGS=10V z 40V/15A,RDS(ON)= 9.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Application z L.

Pin Description ( TO-252-2L ) AFN5008S 40V N-Channel Enhancement Mode MOSFET Features z 40V/20A,RDS(ON)= 8.5mΩ@VGS=10V.