Alfa-MOS AFN5295S
100V N-Channel Enhancement Mode MOSFET
| Part No. | AFN5295S |
|---|---|
| Datasheet | AFN5295S Download |
| Manufacturer |  Alfa-MOS |
| Description | 100V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN5295S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.FEATURES
● ID=20A,RDS(ON)= 9.5mΩ@VGS=10V● ID=15A,RDS(ON)=12mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS (ON)
● TO-252-2L package design Pin
DESCRIPTION
( TO-252-2L ) Application● Primary Side Switch
● POL Synchronous buck converter
● LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN5295ST252RG 5295S TO-252-2L ※ A Lot code ※ B Date code ※ AFN5295ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free
DESCRIPTION
Gate Source Drain Unit Tape & Reel Quantity 2500 EA ©Alfa-MOS Technology Corp. Rev.B Nov. 2023 Page 1 Alfa-MOS Technology AFN5295S 100V N-Channel Enhancement Mode MOSFET Absolute Maxim...
