AFN5295S - 100V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN5295S, a member of the AFN5295S-Alfa 100V N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN5295S
Manufacturer	Alfa-MOS
File Size	492.55 KB
Description	100V N-Channel Enhancement Mode MOSFET
Datasheet	AFN5295S Datasheet
Additional preview pages of the AFN5295S datasheet.

AFN5295S Product details

Description

AFN5295S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

ID=20A,RDS(ON)= 9.5mΩ@VGS=10V.
ID=15A,RDS(ON)=12mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
TO-252-2L package design Pin.

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Published: Jan 16, 2025 |