AFN5295S Description
AFN5295S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
AFN5295S Key Features
- ID=20A,RDS(ON)= 9.5mΩ@VGS=10V
- ID=15A,RDS(ON)=12mΩ@VGS=4.5V
- Super high density cell design for extremely low
- TO-252-2L package design
- Primary Side Switch
- POL Synchronous buck converter
- LED Backlight for LCD TV