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AFN5008S - N-Channel Enhancement Mode MOSFET

Download the AFN5008S datasheet PDF. This datasheet also covers the AFN5008S-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN5008S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • z 40V/20A,RDS(ON)= 8.5mΩ@VGS=10V z 40V/15A,RDS(ON)= 9.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN5008S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN5008S
Manufacturer Alfa-MOS
File Size 410.42 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN5008S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN5008S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN5008S 40V N-Channel Enhancement Mode MOSFET Features z 40V/20A,RDS(ON)= 8.5mΩ@VGS=10V z 40V/15A,RDS(ON)= 9.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Application z LCD Display Backlight Inverters z DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.