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AFN5004S - N-Channel Enhancement Mode MOSFET

Download the AFN5004S datasheet PDF. This datasheet also covers the AFN5004S-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN5004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 40V/20A,RDS(ON)= 5.5mΩ@VGS=10V 40V/15A,RDS(ON)= 6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN5004S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN5004S
Manufacturer Alfa-MOS
File Size 748.98 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN5004S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN5004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN5004S 40V N-Channel Enhancement Mode MOSFET Features 40V/20A,RDS(ON)= 5.5mΩ@VGS=10V 40V/15A,RDS(ON)= 6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application LCD Display Backlight Inverters DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.