AFN5004S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN5004S, a member of the AFN5004S-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN5004S
Manufacturer	Alfa-MOS
File Size	748.98 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN5004S Datasheet
Additional preview pages of the AFN5004S datasheet.

AFN5004S Product details

Description

AFN5004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

40V/20A,RDS(ON)= 5.5mΩ@VGS=10V 40V/15A,RDS(ON)= 6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Published: Dec 6, 2018 |