AFN5510S mosfet equivalent, n-channel enhancement mode mosfet.
100V/30A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-252-2L )
Application
Primary Side.
Features
100V/30A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-252-2L package de.
AFN5510S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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