AFN7412S mosfet equivalent, n-channel mosfet.
30V/8A,RDS(ON)=24mΩ@VGS=10V 30V/7A,RDS(ON)=30mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capabi.
Pin Description ( DFN3.3X3.3-8L )
AFN7412S
30V N-Channel Enhancement Mode MOSFET
Features
30V/8A,RDS(ON)=24mΩ@VGS=10V .
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