AFN8918 mosfet equivalent, n-channel enhancement mode mosfet.
40V/4.6A,RDS(ON)=30mΩ@VGS=10V 40V/3.6A,RDS(ON)=54mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design
Application
Motor and Loa.
Pin Description ( SOT-89-3L )
AFN8918
40V N-Channel Enhancement Mode MOSFET
Features
40V/4.6A,RDS(ON)=30mΩ@VGS=10V 40V.
AFN8918, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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