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AFN8904 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN8904, a member of the AFN8904-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN8904, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/5.6A,RDS(ON)=72mΩ@VGS=10V 30V/3.6A,RDS(ON)=95mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design.

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Datasheet preview – AFN8904

Datasheet Details

Part number AFN8904
Manufacturer Alfa-MOS
File Size 687.55 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8904 Datasheet
Additional preview pages of the AFN8904 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN8904, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-89-3L ) AFN8904 30V N-Channel Enhancement Mode MOSFET Features 30V/5.6A,RDS(ON)=72mΩ@VGS=10V 30V/3.6A,RDS(ON)=95mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control Power Management in White LED System DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No.
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