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AFN8918 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN8918, a member of the AFN8918-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN8918, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 40V/4.6A,RDS(ON)=30mΩ@VGS=10V 40V/3.6A,RDS(ON)=54mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design.

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Datasheet preview – AFN8918

Datasheet Details

Part number AFN8918
Manufacturer Alfa-MOS
File Size 687.66 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8918 Datasheet
Additional preview pages of the AFN8918 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN8918, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-89-3L ) AFN8918 40V N-Channel Enhancement Mode MOSFET Features 40V/4.6A,RDS(ON)=30mΩ@VGS=10V 40V/3.6A,RDS(ON)=54mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No.
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