AFN8918 Datasheet | Alfa-MOS

Description AFN8918, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-89-3L ) 40V N-Channel Enhancement Mode MOSFET Features 40V/4.6A,RDS(ON)=30mΩ@VGS=10V 40V/3.6A,RDS(ON)=54mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No. Part Marking Package AFN8918S89RG 18YW SOT-89-3L ϡʳ 18 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN8918S89RG : 7” Tape & Reel ;...